Liquid crystal display and fabricating method thereof

ABSTRACT

A liquid crystal display (LCD) includes: a gate line formed as a first conductive pattern; a common line formed as the first conductive pattern; a data line insulatedly crossing the gate line and the common line, and formed as a second conductive pattern; a thin film transistor (TFT) formed at a crossing of the gate line and the data line; a common electrode formed as a third conductive pattern, and connected with the common line; and a pixel electrode connected with the TFT and formed as the third conductive pattern to form a horizontal field together with the common electrode, wherein the third conductive pattern is formed as a dual-layer comprising a metal film and a low reflection film formed on the metal film.

This nonprovisional application claims priority under 35 U.S.C. §119(a)based upon patent application Ser. No. 10-2009-0067442 filed in Republicof Korea on Jul. 23, 2009 the entire contents of which are herebyincorporated by reference for all purposes as if fully set forth herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This document relates to a liquid crystal display and, moreparticularly, to a liquid crystal display and its fabrication methodcapable of increasing a contrast ratio while reducing a scatteredreflection from a surface.

2. Discussion of the Related Art

A liquid crystal display (LCD) displays images by adjusting lighttransmittance of liquid crystal by using fields. The LCD is divided intoa vertical field application type LCD and a horizontal field applicationtype LCD according to the direction of fields that drive liquid crystal.

The vertical field application type LCD drives liquid crystal in atwisted nematic (TN) mode by vertical fields formed between pixelelectrodes and common electrodes disposed in a facing manner on upperand lower substrates. The vertical field application type LCD isadvantageous in that it has a high aperture ratio but disadvantageous inthat its viewing angle is narrow.

The horizontal field application type LCD drives liquid crystal in anin-plane switching (IPS) mode by horizontal fields formed between pixelelectrodes and common electrodes disposed to be parallel on a lowersubstrate. The horizontal field application type LCD has an advantagethat its viewing angle is relatively very large.

The horizontal field application type LCD includes a thin filmtransistor (TFT) array substrate (i.e., lower plate) and a color filterarray substrate (upper plate) attached in a facing manner, spacersuniformly maintaining a cell gap between the two substrates, and liquidcrystal filled in the cell gap.

The TFT array substrate includes a plurality of signal wirings and TFTsfor forming horizontal fields by the pixel, and an alignment film coatedthereon to align liquid crystal. The color filter array substrateincludes color filters for color implementation, black matrixes forpreventing light leakage, and an alignment film coated thereon to alignliquid crystal. Liquid crystal varies light transmittance by thehorizontal field formed between the pixel electrodes and commonelectrodes.

In the LCD, generally, the pixel electrodes and the common electrodesare formed as a single transparent conductive film or a single metalfilm.

When the pixel electrodes and common electrodes are formed as a singlemetal layer, respectively, metal with high reflexibility has strongqualities of reflecting external light made incident to a displaysurface. The reflected external light causes constructive interferenceor destructive interference with light made incident from a backlight ofthe LCD, which then passes through a polarizer, causing a spot with adiffraction pattern generated on a display image of the portion whereexternal light has been reflected.

If the pixel electrodes and the common electrodes are formed as atransparent conductive film to reduce reflexibility, although thereflexibility is lowered, quality of black luminance is degraded due toan increase in transmissivity, resulting in degradation of a contrastratio.

SUMMARY OF THE INVENTION

An aspect of this document is to provide a liquid crystal display (LCD)and its fabrication method capable of reducing reflexibility on asurface of an electrode with respect to external light and increasing acontrast ratio of a display image.

In an aspect, a liquid crystal display (LCD) includes: a gate lineformed as a first conductive pattern; a common line separated from thegate line and formed as the first conductive pattern; a data lineinsulatedly crossing the gate line and the common line to define a pixelarea, and formed as a second conductive pattern; a thin film transistor(TFT) formed at a crossing of the gate line and the data line; a commonelectrode formed as a third conductive pattern at the pixel area, andconnected with the common line; and a pixel electrode connected with theTFT and formed as the third conductive pattern to form a horizontalfield together with the common electrode in the pixel area, wherein thethird conductive pattern is formed as a dual-layer comprising a metalfilm and a low reflection film formed on the metal film.

The low reflection film may contain a nitride material or an oxidematerial.

The low reflection film may comprise at least one of CuNx, MoTiNx, ITO,IZO, TO, and CrOx.

The low reflection film may have a thickness of 30 Å to 1000 Å.

The LCD may further include: a gate pad comprising a gate pad lowerelectrode connected with the gate line and a gate pad upper electrodebeing in contact with the gate pad lower electrode via a contact hole; adata pad comprising a data pad lower electrode connected with the dataline and a data pad upper electrode being in contact with the data padlower electrode via a contact hole; and a common pad comprising a commonpad lower electrode connected with the common line and a common padupper electrode being in contact with the common pad lower electrode viaa contact hole, wherein the gate pad upper electrode, the data pad upperelectrode, and the common pad upper electrode are formed as the thirdconductive pattern.

In another aspect, a liquid crystal display (LCD) includes: a gate lineformed as a first conductive pattern; a common line separated from thegate line and formed as the first conductive pattern; a data lineinsulatedly crossing the gate line to define a pixel area, and formed asa second conductive pattern; a thin film transistor (TFT) formed at acrossing of the gate line and the data line; a common electrodeconnected with the common line and formed as a third conductive pattern;and a pixel electrode connected with the TFT and formed as the thirdconductive pattern to form a field together with the common electrode atthe pixel area, wherein the third conductive pattern is formed as atransparent conductive film having an embossed surface through hazeprocessing.

The transparent conductive film may comprise indium tin oxide (ITO) orindium zinc oxide (IZO).

The pixel electrode may form a horizontal field or a vertical fieldtogether with the common electrode.

In still another aspect, a method for fabricating a liquid crystaldisplay (LCD) includes: forming a gate line with a first conductivepattern, a gate electrode of a thin film transistor (TFT) connected withthe gate line, and a common line separated from the gate line on asubstrate; coating a gate insulating layer on the entire surface of theresultant substrate and forming a semiconductor pattern at a certainregion on the gate insulating layer; forming a data line with a secondconductive pattern on the semiconductor pattern such that it crosses thegate line and the common line to define a pixel area, a source electrodeof the TFT connected with the data line, and a drain electrode of theTFT facing the source electrode; coating a passivation film on theentire surface of the resultant substrate, and patterning thepassivation film and the gate insulating layer to expose a portion ofthe common line and a portion of the drain electrode; forming a commonelectrode as a third conductive pattern connected with the exposedcommon line; and forming a pixel electrode as the third conductivepattern connected with the exposed drain electrode to form a horizontalfield at the pixel area, the pixel electrode facing the commonelectrode, wherein the third conductive pattern is formed as adual-layer comprising a metal film and a low reflection film formed onthe metal film.

In yet another aspect, a method for fabricating a liquid crystal display(LCD) includes: forming a gate line as a first conductive pattern, agate electrode of a thin film transistor (TFT) connected with the gateline, and a common line separated from the gate line on a substrate;coating a gate insulating layer on the entire surface of the resultantsubstrate and forming a semiconductor pattern at a certain region on thegate insulating layer; forming a data line with a second conductivepattern on the semiconductor pattern such that it crosses the gate lineto define a pixel area, a source electrode of the TFT connected with thedata line, and a drain electrode of the TFT facing the source electrode;coating a passivation film on the entire surface of the resultantsubstrate, and patterning the passivation film and the gate insulatinglayer to expose a portion of the common line and a portion of the drainelectrode; forming a common electrode as a third conductive patternconnected with the exposed common line; and forming a pixel electrode asthe third conductive pattern connected with the exposed drain electrodeto form a horizontal field at the pixel area, the pixel electrode facingthe common electrode, wherein the third conductive pattern is formed asa transparent conductive film having an embossed surface through hazeprocessing.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention andtogether with the description serve to explain the principles of theinvention.

In the drawings:

FIG. 1 is a plan view of a thin film transistor (TFT) array substrateaccording to a first exemplary embodiment of the present invention.

FIG. 2 is a sectional view of the TFT array substrate taken along linesI-I′ and of FIG. 1.

FIGS. 3 a to 3 d are sequential sectional views showing a method offabricating a TFT array substrate.

FIGS. 4 a to 4 c illustrate the process of FIG. 3 d in detail.

FIG. 5 a is a graph showing simulation results obtained by comparing areflexibility in case of forming a third conductive pattern group as adual-layer including a low reflection film made of a nitride materialaccording to an exemplary embodiment of the present invention toreflexibility in case of forming a third conductive pattern group as asingle metal film according to the related art.

FIG. 5 b is a graph showing simulation results obtained by comparing areflexibility in case of forming a third conductive pattern group as adual-layer including a low reflection film made of an oxide materialaccording to an exemplary embodiment of the present invention toreflexibility in case of forming a third conductive pattern group as asingle metal film according to the related art.

FIG. 6 is a plan view of a TFT array substrate according to a secondexemplary embodiment of the present invention.

FIG. 7 is a sectional view of the TFT array substrate taken along linesI-I′ and II-II′ in FIG. 6.

FIGS. 8 a to 8 c illustrate haze processing.

FIG. 9 is photographs showing magnified surfaces of a transparentconductive material before and after haze processing.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Hereinafter, exemplary embodiments of the present invention will now bedescribed with reference to FIGS. 1 to 9. In the following exemplaryembodiments, an in-plane switching (IPS) mode thin film transistor (TFT)array substrate fabricated through a four-masking process and itsfabrication method will be described, but the technical idea of thepresent invention is not meant to be limited to the number of masks anda field mode scheme for driving liquid crystal.

<First Embodiment>

A first exemplary embodiment of the present invention will now bedescribed with reference to FIGS. 1 to 5 b. In the first exemplaryembodiment, pixel part and pad part electrodes are formed as adual-layer including a metal film and a low reflection film formed onthe metal film.

FIG. 1 is a plan view of a thin film transistor (TFT) array substrateaccording to a first exemplary embodiment of the present invention, andFIG. 2 is a sectional view of the TFT array substrate taken along linesI-I′ and II-II′ of FIG. 1.

The TFT array substrate illustrated in FIGS. 1 and 2 includes a gateline 2 and a data line 4 formed to cross with a gate insulating layer 46interposed therebetween on a lower substrate 45, a TFT 6 formed at eachcrossing, a pixel electrode 14 and a common electrode 19 formed to forma horizontal field at a pixel area provided with the crossing structure,and a common line 16 connected with the common electrode 19. Further,the TFT array substrate includes a storage capacitor 20 formed at anoverlap portion of the common line 16 and the pixel electrode 14, a gatepad 24 connected with the gate line 2, a data pad 33 connected with thedata line 4, and a common pad 36 connected with the common line 16.

The gate line 2 supplying a gate signal and the data line 4 supplying adata signal are formed with a crossing structure with the gateinsulating layer interposed therebetween, defining the pixel area. Here,the gate line 2 is formed as a first conductive pattern (i.e., gatemetal pattern), and the data line 4 is formed as a second conductivepattern (i.e., source/drain metal patterns).

The common line 16 and the common electrode 19 supply a referencevoltage for driving liquid crystal. The common line 16 includes aninternal common line 16A formed to partially overlap with the pixelelectrode 14 at a display area and an external common line 16B commonlyconnecting internal common lines 16A at a non-display area. The commonline 16 is formed as a first conductive pattern.

The common electrode 19 includes a horizontal part 19A formed to beparallel to the gate line 2 and connected with the internal common line16A via a second contact hole 15 penetrating through the gate insulatinglayer 46 and a passivation film 52, and a finger part 19B extending fromthe horizontal part 19A to the pixel area. The common electrode 19 isformed as a third conductive pattern of a dual-layer including a metalfilm 35A and a low reflection film 35B.

The TFT 6 is switched in response to a gate signal of the gate line 2 tocharge a pixel signal of the data line 4 to the pixel electrode 14. Tothis end, the TFT includes a gate electrode 8 connected with the gateline 2, a source electrode 10 connected with the data line 4, and adrain electrode 12 connected with the pixel electrode. Further, the TFT6 includes an active layer 48 overlapping with the gate electrode 88 andthe internal common line 16A with the gate insulating layer 46interposed therebetween and forming a channel between the sourceelectrode 10 and the drain electrode 12, and an ohmic-contact layer 50formed on the active layer 48, excluding the channel, for anohmic-contact with the source electrode 10 and the drain electrode 12.The active layer 48 and the ohmic-contact layer 50 are formed to overlapwith the data line 4 formed as the second conductive pattern and thedata pad lower electrode 32 together with the source electrode 10 andthe drain electrode 12.

The pixel electrode 14, facing the common electrode 19 at the pixelarea, forms a horizontal field. The pixel electrode 14 is connected withthe drain electrode 12 of the TFT 6 via a first contact hole 13penetrating through the passivation film 52 and formed at the pixelarea. In particular, the pixel electrode 14 includes a horizontal part14A connected with the drain electrode 12 and formed to be parallel toan adjacent gate line 2, and a finger part 14B, which has a fingershape, extending from the horizontal part 14A to the pixel area andformed to be parallel to the finger part of the common electrode 19. Thepixel electrode 14 is formed as a third conductive pattern formed as adual-layer including the metal film 35A and the low reflection film 35B.

The horizontal part 14A and the outermost finger part 14B of the pixelelectrode 14 overlap partially with the internal common line 16A withthe gate insulating layer 46 and the passivation film 52 interposedtherebetween, forming a storage capacitor 20. The storage capacitor 20stably maintains a pixel signal of a current which has been charged inthe pixel electrode 14 until when a pixel signal of a next frame ischarged.

The gate line 2 is connected with a gate driver (not shown) via the gatepad 24. The gate pad 24 includes a gate pad lower electrode 26 extendingfrom the gate line 2 and a gate pad upper electrode 28 connected withthe gate pad lower electrode 26 via a third contact hole 27 penetratingthrough the gate insulating layer 46 and the passivation film 52. Thegate pad lower electrode 26 is formed as the first conductive pattern,and the gate pad upper electrode 28 is formed as the third conductivepattern of a dual-layer including the metal film 35A and thelow-resistance film 35B.

The data line 4 is connected with a data driver (not shown) via a datapad 30. The data pad includes a data pad lower electrode 32 extendingfrom the data line 4 and a data pad upper electrode 34 connected withthe data pad lower electrode 32 via a fourth contact hole 33 penetratingthrough the passivation film 52. The data pad lower electrode 32 isformed as the second conductive pattern, and the data pad upperelectrode 34 is formed as the third conductive pattern of a dual-layerincluding the metal film 35A and the low reflection film 35B.

The common line 16 is connected with an external reference voltagesource (not shown) via the common pad 36. The common pad 36 includes acommon pad lower electrode 38 extending from the eternal common line 16Band a common pad upper electrode 40 connected with the common pad lowerelectrode 38 via a fifth contact hole 39 penetrating through the gateinsulating layer 46 and the passivation film 52. The common pad lowerelectrode 38 is formed as the first conductive pattern, and the commonpad upper electrode 40 is formed as the third conductive pattern of adual-layer including the metal film 35A and the low reflection 35B.

The third conductive pattern including the pixel electrode 14, thecommon electrode 19, the gate pad upper electrode 28, the data pad upperelectrode 34, and the common pad upper electrode 40 includes the metalfilm 35A. Thus, according to the exemplary embodiment of the presentinvention, an increase in the transmissivity can be restrained, andthus, a contrast ratio of an image can be enhanced, compared with thecase where the third conductive pattern is formed only as a singletransparent conductive film. In this case, if the third conductivepattern is formed only as a single metal film, the metal film having ahigh reflexibility would scattered-reflect external light to degrade adisplay quality, so in the exemplary embodiment of the presentinvention, the low reflection film 35B is additionally formed on themetal film 35A. The low reflection film 35B contains a nitride materialor an oxide material to reduce a surface reflexibility with respect toexternal light.

A method of fabricating the TFT array substrate with such aconfiguration will now be described through four masking processes.

With reference to FIG. 3 a, a first conductive pattern group, includingthe gate line 2, the gate electrode 8, the gate pad lower electrode 26,the common line 16, and the common pad lower electrode 38, is formed onthe lower substrate 45 through a first masking process.

In detail, a first conductive material is formed on the lower substrate45 through a deposition method such as sputtering. Next, the firstconductive material is patterned through a photolithography process andan etching process using a first mask to form the gate line 2, the gateelectrode 8, the gate pad lower electrode 26, the common line 16, andthe common pad lower electrode 38. Here, as the first conductivematerial, Cr, MoW, MoTi, Cr/Al, Cu, Al(Nd), Mo/Al, Mo/Al(Nd), Cr/Al(Nd),and the like, may be used.

With reference to FIG. 3 b, the gate insulating layer 46 is coated onthe lower substrate 45 with the first conductive pattern group formedthereon through a deposition method such as PECVD or sputtering. As thematerial of the gate insulating layer 46, an inorganic insulationmaterial such as silicon oxide (SiOx), silicon nitride (SiNx), or thelike, may be used. Subsequently, a semiconductor pattern including theactive layer 48 and the ohmic-contact layer 50, and a second conductivepattern group including the data line, the source electrode 10, thedrain electrode 12, and the data pad lower electrode 32 are formed onthe gate insulating layer 46 by using a second masking process.

In detail, an amorphous silicon layer, an n+ amorphous silicon layer,and a second conductive material are sequentially formed on the lowersubstrate 45 with the gate insulating layer 46 formed thereon through adeposition method such as PECVD, sputtering, and the like. Here, as thesecond conductive material, Cr, MoW, MoTi, Cr/Al, Cu, Al(Nd), Mo/Al,Mo/Al(Nd), Cr/Al(Nd), and the like, may be used. Thereafter, aphotoresist pattern is formed on the second conductive material througha photolithography process using a second mask. As the second mask, adiffraction (i.e., slit) exposure mask having a diffraction exposurepart or a semi-transmissive mask is used at a channel part of the TFT.The second mask makes a photoresist pattern at the channel part be lowerthan a photoresist pattern at a different second conductive patterngroup part. Subsequently, the second conductive material is patternedthrough a wet etching process using the photoresist pattern to form asecond conductive pattern group including the data line 4, the sourceelectrode 10, the drain electrode 12 integrated with the sourceelectrode 10, and the data pad lower electrode 32. And then, the n+amorphous silicon layer and the amorphous silicon layer aresimultaneously patterned through a dry etching process using the samephotoresist pattern to form the ohmic-contact layer 50 and the activelayer 48. And, the photoresist pattern relatively low at the channelpart is removed through an ashing process using oxygen (O₂) plasma, andthe source/drain metal patterns and the ohmic-contact layer 50 at thechannel part are then etched through a dry etching process. Accordingly,the active layer 48 of the channel part is exposed, separating thesource electrode 10 and the drain electrode 12. Thereafter, thephotoresist patterns remaining on the second conductive pattern groupare all removed through a strip process.

With reference to FIG. 3 c, the passivation film 52, including the firstto fifth contact holes 13, 15, 27, 33, and 39, is formed on the gateinsulating layer 46 with the second conductive pattern group formedthereon by using a third masking process.

In detail, the passivation film 52 is formed on the entire surface ofthe gate insulating layer 46 with the second conductive pattern groupformed thereon through a deposition method such as PECVD or the like. Asa material of the passivation film 52, an in organic insulation materialsimilar to the gate insulating layer 46, an acrylic organic compoundhaving a small dielectric constant, or an organic insulation materialsuch as benzocyclobetene (BCB), perfluorocyclobutane (PFCB), and thelike, may be used. Subsequently, the passivation film 52 is patternedthrough a photolithography process and an etching process using a thirdmask to form the first to fifth contact holes 13, 21, 27, 33, and 39.The first contact hole 13, penetrating through the passivation film 52,exposes the drain electrode 12, and the second contact hole 15,penetrating through the passivation film 52 and the gate insulatinglayer 46, exposes the internal common line 16A. The third contact hole27, penetrating through the passivation film 52 and the gate insulatinglayer 46, exposes the gate pad lower electrode 26, the fourth contacthole 33, penetrating through the passivation film 52, exposes the datapad lower electrode 32, and the fifth contact hole 39, penetratingthrough the passivation film 52 and the gate insulating layer 46,exposes the common pad lower electrode 38.

With reference to FIG. 3 d, a third conductive pattern group, includingthe pixel electrode 14, the common electrode 19, the storage upperelectrode 22, the gate pad upper electrode 28, the data pad upperelectrode 34, and the common pad upper electrode 40 each formed as adual-layer, is formed by using a fourth masking process.

In detail, as shown in FIG. 4 a, a metal material is coated on the lowersubstrate 45 with the passivation film 52 including the contact holes13, 15, 27, 33, and 39 formed thereon, through a deposition method suchas sputtering or the like. As the metal material, Cr, MoW, MoTi, Cr/Al,Cu, Al(Nd), Mo/Al, Mo/Al(Nd), Cr/Al(Nd), and the like, may be used.Subsequently, a reactive sputtering process is performed by using ametal target such as Cu, Cr, MoTi, and the like, that reacts withnitrogen (N₂) plasma or oxygen (O₂) plasma, to form a low reflectionmaterial on the lower substrate 45 with the metal material formedthereon. In this case, as the low reflection material, a nitride-basedmaterial such as CuNx, MoTiNx, and the like, is used.

Meanwhile, in the reactive sputtering process, a transparent conductivetarget such as ITO, IZO, TO, and the like, may be used instead of themetal target. In this case, an oxide-based material such as ITO, IZO,TO, CrOx, and the like, is used as the low reflection material.

A deposition thickness of the low reflection material is preferably 30 Åto 1000 Å. If the thickness of the low reflection material is lower than30 Å, the function of reducing the surface reflexibility is degraded,while if the thickness of the low reflection material exceeds 1000 Å, adeposition quality is degraded and the luminance is reduced.

Subsequently, the metal material and the low reflection material aresimultaneously patterned through a photolithography process and anetching process using a fourth mask to form the third conductive patterngroup including the pixel electrode 14, the common electrode 19, thegate pad upper electrode 28, the data pad upper electrode 34, and thecommon pad upper electrode 40 each including dual-layer (metal film 35Aand low reflection film 35B). The pixel electrode 14 is electricallyconnected with the drain electrode 12 via the first contact hole 13. Thecommon electrode 19 is electrically connected with the internal commonline 16A via the second contact hole 15. The gate pad upper electrode 28is electrically connected with the gate pad lower electrode 26 via thethird contact hole 27. The data pad upper electrode 34 is electricallyconnected with the data pad lower electrode 32 via the fourth contacthole 33. The common pad upper electrode 40 is electrically connectedwith the common pad lower electrode 38 via the fifth contact hole 39.

FIG. 5 a is a graph showing simulation results obtained by comparing areflexibility in case of forming the third conductive pattern group as adual-layer including a low reflection film made of a nitride materialaccording to an exemplary embodiment of the present invention toreflexibility in case of forming a third conductive pattern group as asingle metal film according to the related art. In the graph shown inFIG. 5, a vertical axis indicates reflexibility (%) and a horizontalaxis indicates wavelength (nm). In the graph, a line ‘A’ representsreflexibility when the third conductive pattern group is formed as anMoTi single film, a line ‘B’ represents reflexibility at a middleportion of the third conductive pattern group formed as a dual-layer ofMoTi and CuNx, and a line ‘C’ represents reflexibility at an edgeportion of the third conductive pattern group formed as a dual-layer ofMoTi and CuNx.

As shown in FIG. 5 a, it is noted that the surface reflexibilities ‘B’and ‘C’ according to the exemplary embodiment of the present inventionare much smaller than the related art reflexibility ‘A’.

FIG. 5 b is a graph showing simulation results obtained by comparing areflexibility in case of forming the third conductive pattern group as adual-layer including a low reflection film made of an oxide materialaccording to an exemplary embodiment of the present invention toreflexibility in case of forming the third conductive pattern group as asingle metal film according to the related art. In the graph shown inFIG. 5 b, a vertical axis indicates reflexibility (%), and a horizontalaxis indicates wavelength (nm). In the graph, a line ‘A’ representsreflexibility in case of forming the third conductive pattern group as aMoTi single film, a line ‘B’ represents reflexibility in case of formingthe third conductive pattern group as a dual-layer of MoTi and ITO (100Å), a line ‘C’ represents reflexibility in case of forming the thirdconductive pattern group as a dual-layer of MoTi and ITO (200 Å), and aline ‘D’ represents reflexibility in case of forming the thirdconductive pattern group as a dual-layer of MoTi and ITO (300 Å).

As shown in FIG. 5 b, it is noted that the surface reflexibilities ‘B’to ‘D’ according to the exemplary embodiment of the present inventionare much smaller than the related art reflexibility ‘A’. Because the lowreflection film serves to absorb external light, the effect of reducingthe surface reflexibility is increased as the thickness of the lowreflection film increases within a certain range (30 Å to 1000 Å).

As described above, according to the LCD and its fabrication methodaccording to the first exemplary embodiment of the present invention,the third conductive pattern group of the pixel electrode and the likeis formed as the dual-layer including the metal film and the lowreflection film, so the reflexibility at the electrode surface can bereduced over external light while increasing the contrast ratio of adisplay image, thereby significantly reducing generation of spots due toexternal light. The LCD and its fabrication method according to thefirst exemplary embodiment of the present invention can be applicable asit is to any configuration, such as, for example, a fringe fieldswitching (FFS) mode LCD, in which the pixel electrodes and commonelectrodes form horizontal fields and have a finger structure.

<Second Embodiment>

A second exemplary embodiment of the present invention will now bedescribed with reference to FIGS. 6 to 9. In the second exemplaryembodiment, pixel part and pad part electrodes are formed as a singletransparent conductive film with an embossed surface through hazeprocessing.

FIG. 6 is a plan view of a TFT array substrate using four maskingprocesses according to a second exemplary embodiment of the presentinvention, and FIG. 7 is a sectional view of the TFT array substratetaken along lines and II-IP in FIG. 6.

The TFT array substrate as illustrated in FIGS. 6 and 7 includes a gateline 102 and a data line 104 formed to cross with a gate insulatinglayer 146 interposed therebetween on a lower substrate 145, a TFT 106formed at each crossing, a pixel electrode 114 and a common electrode119 formed to form a horizontal field at a pixel area provided with thecrossing structure, and a common line 116 connected with the commonelectrode 119. Further, the TFT array substrate includes a storagecapacitor 120 formed at an overlap portion of the common line 116 andthe pixel electrode 114, a gate pad 124 connected with the gate line102, a data pad 133 connected with the data line 104, and a common pad136 connected with the common line 116.

The gate line 102 supplying a gate signal and the data line 104supplying a data signal are formed with a crossing structure with thegate insulating layer interposed therebetween, defining the pixel area.Here, the gate line 102 is formed as a first conductive pattern (i.e.,gate metal pattern), and the data line 104 is formed as a secondconductive pattern (i.e., source/drain metal patterns).

The common line 116 and the common electrode 119 supply a referencevoltage for driving liquid crystal. The common line 116 includes aninternal common line 116A formed to partially overlap with the pixelelectrode 114 at a display area and an external common line 116Bcommonly connecting internal common lines 116A at a non-display area.The common line 116 is formed as a first conductive pattern.

The common electrode 119 includes a horizontal part 119A formed to beparallel to the gate line 102 and connected with the internal commonline 116A via a second contact hole 115 penetrating through the gateinsulating layer 146 and a passivation film 152, and a finger part 119Bextending from the horizontal part 119A to the pixel area. The commonelectrode 119 is formed as a third conductive pattern, a singletransparent conductive pattern, having an embossed surface.

The TFT 106 is switched in response to a gate signal of the gate line102 to charge a pixel signal of the data line 104 to the pixel electrode114. To this end, the TFT includes a gate electrode 108 connected withthe gate line 102, a source electrode 110 connected with the data line104, and a drain electrode 112 connected with the pixel electrode.Further, the TFT 106 includes an active layer 148 overlapping with thegate electrode 188 and the internal common line 116A with the gateinsulating layer 146 interposed therebetween and forming a channelbetween the source electrode 110 and the drain electrode 112, and anohmic-contact layer 150 formed on the active layer 148, excluding thechannel, for an ohmic-contact with the source electrode 110 and thedrain electrode 112. The active layer 148 and the ohmic-contact layer150 are formed to overlap with the data line 104 formed as the secondconductive pattern and the data pad lower electrode 132 together withthe source electrode 110 and the drain electrode 112.

The pixel electrode 114, facing the common electrode 119 at the pixelarea, forms a horizontal field. The pixel electrode 114 is connectedwith the drain electrode 112 of the TFT 6 via a first contact hole 113penetrating through the passivation film 152 and formed at the pixelarea. In particular, the pixel electrode 114 includes a horizontal part114A connected with the drain electrode 112 and formed to be parallel toan adjacent gate line 102, and a finger part 114B, which has a fingershape, extending from the horizontal part 114A to the pixel area andformed to be parallel to the finger part of the common electrode 119.The pixel electrode 114 is formed as a third conductive pattern, asingle transparent conductive pattern, having an embossed surface.

The horizontal part 114A and the outermost finger part 114B of the pixelelectrode 114 overlap partially with the internal common line 116A withthe gate insulating layer 146 and the passivation film 152 interposedtherebetween, forming a storage capacitor 120. The storage capacitor 120stably maintains a pixel signal of a current which has been charged inthe pixel electrode 114 until when a pixel signal of a next frame ischarged.

The gate line 102 is connected with a gate driver (not shown) via thegate pad 124. The gate pad 124 includes a gate pad lower electrode 126extending from the gate line 102 and a gate pad upper electrode 128connected with the gate pad lower electrode 126 via a third contact hole127 penetrating through the gate insulating layer 146 and thepassivation film 152. The gate pad lower electrode 126 is formed as thefirst conductive pattern, and the gate pad upper electrode 128 is formedas the third conductive pattern, a single transparent conductivepattern, having an embossed surface.

The data line 104 is connected with a data driver (not shown) via a datapad 130. The data pad includes a data pad lower electrode 132 extendingfrom the data line 104 and a data pad upper electrode 134 connected withthe data pad lower electrode 132 via a fourth contact hole 133penetrating through the passivation film 152. The data pad lowerelectrode 132 is formed as the second conductive pattern, and the datapad upper electrode 134 is formed as the third conductive pattern of adual-layer including the metal film 135A and the low reflection film135B.

The common line 116 is connected with an external reference voltagesource (not shown) via the common pad 136. The common pad 136 includes acommon pad lower electrode 138 extending from the eternal common line116B and a common pad upper electrode 140 connected with the common padlower electrode 138 via a fifth contact hole 139 penetrating through thegate insulating layer 146 and the passivation film 152. The common padlower electrode 138 is formed as the first conductive pattern, and thecommon pad upper electrode 140 is formed as the third conductivepattern, a single transparent conductive pattern, having an embossedsurface.

The third conductive pattern including the pixel electrode 114, thecommon electrode 119, the gate pad upper electrode 128, the data padupper electrode 134, and the common pad upper electrode 140 is formed asthe single transparent conductive film having the embossed surface. Thethird conductive pattern scatters external light made incident theretofrom its embossed surface to considerably reduce the amount ofreflection of the external light that may cause a constructiveinterference or destructive interference over light made incident from abacklight of the LCD, thus reducing the surface reflexibility withrespect to the external light. In addition, the third conductive patternhaving the embossed surface restrains an increase in the transmissivityto lead to an increase in the contrast ratio, compared with the casewhere the surface is smooth.

The method of fabricating the TFT array substrate with suchconfiguration is substantially the same as that of the fabricationmethod described with reference to FIGS. 3 a to 4 c, except for theformation of the third conductive pattern group. Thus, only the methodof forming the third conductive pattern group will now be described.

When first to third masking processes are performed, the passivationfilm 152 including the contact holes 113, 115, 127, 133, and 139 areformed along with the first and second conductive pattern groups on thesubstrate 145. The third conductive pattern group made of a transparentconductive material, including the pixel electrode 114, the commonelectrode 199, the storage upper electrode 122, the gate pad upperelectrode 128, the data pad upper electrode 134, and the common padupper electrode 140, each having the embossed surface, is formed on thepassivation film 152 by using a fourth masking process.

In detail, as shown in FIG. 8 a, a transparent conductive material iscoated on the lower substrate 145 with the passivation film 152 formedthereon through a deposition method such as sputtering or the like. Asthe transparent conductive material, ITO, IZO, and the like, may beused. Subsequently, as shown in FIG. 8 b, SiH4 or NH3 gas is injectedinto a processing chamber in which a certain temperature and pressureare maintained, to plasma-process the transparent conductive materialformed on the lower substrate 145. Then, the surface of the transparentconductive material is haze-processed in an embossed form through theplasma processing as shown in FIG. 8 c. The certain pressure may be 500mmTorr or lower, and the certain temperature may range from 200° C. to700° C. As to the haze processing, an oxygen component of thetransparent conductive material and a hydrogen component of the injectedgas react with each other under a plasma atmosphere, generating water,and reduction occurs in an indium (In) component constituting thetransparent conductive material due to the influence of the chemicalreaction. Roughness of the surface of the transparent conductivematerial increases due to the reduction of the indium component,resulting in the distinct embossed form as shown in FIG. 9.

When the haze processing is completed, the transparent conductivematerial is patterned through a photolithography process and an etchingprocess using a fourth mask to form the third conductive pattern groupincluding the pixel electrode 114, the common electrode 199, the gatepad upper electrode 128, the data pad upper electrode 134, and thecommon pad upper electrode 140 each having the embossed surface. Thepixel electrode 114 is electrically connected with the drain electrode112 via the first contact hole 113.

The common electrode 119 is electrically connected with the internalcommon line 116A via the second contact hole 115. The gate pad upperelectrode 128 is electrically connected with the gate pad lowerelectrode 126 via the third contact hole 127. The data pad upperelectrode 134 is electrically connected with the data pad lowerelectrode 132 via the fourth contact hole 133. The common pad upperelectrode 140 is electrically connected with the common pad lowerelectrode 138 via the fifth contact hole 139.

As described above, according to the LCD and its fabrication methodaccording to the second exemplary embodiment of the present invention,the third conductive pattern group such as the pixel electrode and thelike is formed as the single transparent conductive film having theembossed surface, so the contrast ratio of a display image can beincreased and the reflexibility at the electrode surface with respect toexternal light can be reduced, thus considerably reducing generation ofspots by external light. The second exemplary embodiment of the presentinvention has a wide applicable coverage compared with the firstexemplary embodiment, and is advantageous in terms of time required forprocessing and a material cost. Also, according to the LCD and itsfabrication method according to the second exemplary embodiment of thepresent invention, the electrode part is formed by using only thehaze-processed transparent conductive film, the LCD and its fabricationmethod according to the second exemplary embodiment can be sufficientlyapplicable to a vertical field mode, to which the LCD and itsfabrication method according to the first exemplary embodiment can behardly applicable, due to degradation of luminance (because of thepresence of the metal film) as well as to the horizontal field mode. Inother words, the technique proposed through the second exemplaryembodiment of the present invention can be applicable as it is to anymode, for example, an IPS mode, an FFS mode, a TN mode, a VA mode, andthe like, in which an electrode part is formed by using a transparentconductive film. In addition, according to the LCD and its fabricationmethod according to the second exemplary embodiment of the presentinvention, the electrode part is formed as the single transparentconductive film, time required for processing can be shortened and thematerial cost can be reduced compared with the first exemplaryembodiment in which the electrode part is formed as a dual-layer.

It will be apparent to those skilled in the art that variousmodifications and variation can be made in the present invention withoutdeparting from the spirit or scope of the invention. Thus, it isintended that the present invention cover the modifications andvariations of this invention provided they come within the scope of theappended claims and their equivalents.

What is claimed is:
 1. A liquid crystal display (LCD) device comprising:a gate line formed as a first conductive pattern; a common lineseparated from the gate line and formed as the first conductive pattern;a data line insulatedly crossing the gate line and the common line todefine a pixel area, and formed as a second conductive pattern; a thinfilm transistor (TFT) formed at a crossing of the gate line and the dataline; a common electrode formed as a third conductive pattern at thepixel area, and connected with the common line; and a pixel electrodeconnected with the TFT and formed as the third conductive pattern toform a horizontal field together with the common electrode in the pixelarea, wherein the third conductive pattern is formed as a dual-layercomprising a metal film and a low reflection film formed on the metalfilm, wherein the low reflection film has a thickness of 30 Å to 1000 Å.2. The device of claim 1, wherein the low reflection film contains anitride material or an oxide material.
 3. The device of claim 2, whereinthe low reflection film comprises at least one of CuNx, MoTiNx, ITO,IZO, TO, and CrOx.
 4. The device of claim 1, further comprising: a gatepad comprising a gate pad lower electrode connected with the gate lineand a gate pad upper electrode being in contact with the gate pad lowerelectrode via a contact hole; a data pad comprising a data pad lowerelectrode connected with the data line and a data pad upper electrodebeing in contact with the data pad lower electrode via a contact hole;and a common pad comprising a common pad lower electrode connected withthe common line and a common pad upper electrode being in contact withthe common pad lower electrode via a contact hole, wherein the gate padupper electrode, the data pad upper electrode, and the common pad upperelectrode are formed as the third conductive pattern.
 5. A method forfabricating a liquid crystal display (LCD), the method comprising:forming a gate line with a first conductive pattern, a gate electrode ofa thin film transistor (TFT) connected with the gate line, and a commonline separated from the gate line on a substrate; coating a gateinsulating layer on the entire surface of the resultant substrate andforming a semiconductor pattern at a certain region on the gateinsulating layer; forming a data line with a second conductive patternon the semiconductor pattern such that it crosses the gate line and thecommon line to define a pixel area, a source electrode of the TFTconnected with the data line, and a drain electrode of the TFT facingthe source electrode; coating a passivation film on the entire surfaceof the resultant substrate, and patterning the passivation film and thegate insulating layer to expose a portion of the common line and aportion of the drain electrode; forming a common electrode with a thirdconductive pattern connected with the exposed common line; and forming apixel electrode with the third conductive pattern connected with theexposed drain electrode to form a horizontal field at the pixel area,the pixel electrode facing the common electrode, wherein the thirdconductive pattern is formed as a dual-layer comprising a metal film anda low reflection film formed on the metal film, wherein the lowreflection film has a thickness of 30 Å to 1000 Å.
 6. The method ofclaim 5, wherein the low reflection film contains a nitride material oran oxide material.
 7. The method of claim 6, wherein the low reflectionfilm comprises at least one of CuNx, MoTiNx, ITO, IZO, TO, and CrOx. 8.The method of claim 5, further comprising: forming a gate pad which hasthe first conductive pattern and comprises a gate pad lower electrodeconnected with the gate line and a gate pad upper electrode being incontact with the gate pad lower electrode via a contact hole; forming adata pad which has the second conductive pattern and comprises a datapad lower electrode connected with the data line and a data pad upperelectrode being in contact with the data pad lower electrode via acontact hole; and forming a common pad which has the first conductivepattern and comprises a common pad lower electrode connected with thecommon line and a common pad upper electrode being in contact with thecommon pad lower electrode via a contact hole, wherein the gate padupper electrode, the data pad upper electrode, and the common pad upperelectrode are formed as the third conductive pattern.